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Silicon N-Channel Power MOSFET
CS9N90F A9D
○R
General Description：
CS9N90F A9HD the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
900 9 60 0.9
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 62nC) l Low Reverse transfer capacitances(Typical: 18pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of PC POWER.
CS9N90FA9D Datasheet
