Datasheet Summary
HGB029NE4SL , HGP029NE4SL
P-1
45V N-Ch Power MOSFET
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
TO-263
VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited)
TO-220
2.2 mΩ
2.9 mΩ
2.5 mΩ
3.2 mΩ
Drain Pin2
Gate Pin 1
Src
Part Number
Package Marking
Pin3
HGB029NE4SL TO-263 GB029NE4SL
HGP029NE4SL TO-220...