Datasheet Summary
HGB042N10A , HGP042N10A
P-1
100V N-Ch Power MOSFET
Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application
◇ DC-DC Conversion
◇ Hard Switching and High Speed Circuit
◇ Power Tools ◇ UPS
TO-263
◇ SSR
VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited)
100 V 3.4 mΩ 3.7 mΩ 167 A
TO-220
Drain Gate
Src
Part Number
Package Marking
TO-263 GB042N10A
HGP042N10A
TO-220...