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HGN036N08S
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
P-1
80V N-Ch Power MOSFET
VDS RDS(on),typ VGS=10V ID (Sillicon Limited) ID (Package Limited)
80 3.
HGN036N08S Datasheet
