HGP053N06SL Datasheet | Hunteck

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial TO-263 60V N-Ch Power MOSFET VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) 60 3.9 5.3 4.1 5.6 105 V mΩ mΩ mΩ mΩ A TO-220 Drain Pin2 Gate Pin 1 Src Part Number Package Marking Pin3 HGB053N06SL TO-263 GB053N06SL HGP053N06SL TO-220 GP053N06SL Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.4m H, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Symbol RθJA RθJC Value Unit 105 A ±20 80 m J -55...