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HGB290N10SL , HGP290N10SL
P-1
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
TO-263
100V N-Ch Power MOSFET
VDS
RDS(on),typ RDS(on),typ
TO-263 VGS=10V VGS=4.5V
RDS(on),typ RDS(on),typ
TO-220 VGS=10V VGS=4.5V
ID (Sillicon Limited)
100 V 22.7 mΩ 27.7 mΩ 23.