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HTS500B03
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
P-1
30V Dual P-Ch Power MOSFET
VDS
-30 V
RDS(on),typ VGS=-10V 40 mΩ
RDS(on),typ VGS=-5V 65 mΩ
ID (Sillicon Limited)
-5 A
SOIC-8
D2 D2 D1 D1
G2 G1 S2 S1
Part Number HTS500B03
Package Marking SOIC-8 TS500B03
D1 G1
D2 G2
S1
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
HTS500B03 Datasheet
