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HTS600C06
P-1
60V Dual N+P Channel Power MOSFET
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ Lead Free, Halogen Free
Application ◇ Hard Switching and High Speed Circuit ◇ BLDC motor
VDS RDS(on),max ID (Sillicon Limited)
N-CH P-CH 60 -60 V 60 90 mΩ 5 -4 A
SOIC-8
D2 D2 D1 D1
Part Number HTS600C06
Package Marking SO8 TS600C06
D1 G1
G2 G1 S2 S1
D2
G2
S1
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ -
Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient Thermal Resis
HTS600C06 Datasheet
