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H57V2582GTR-60J - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

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Hynix Semiconductor

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H57V2582GTR-60J 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O by Hynix Semiconductor - Datasheet Preview — Datasheet preview – H57V2582GTR-60J

Datasheet Details

Part number	H57V2582GTR-60J
Manufacturer	Hynix Semiconductor
File Size	227.17 KB
Description	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Datasheet	H57V2582GTR-60J Datasheet
Note	This datasheet PDF includes multiple part numbers: H57V2582GTR-60J, H57V2582GTR-60I. Please refer to the document for exact specifications by model.
Additional preview pages of the H57V2582GTR-60J datasheet.

Product details

Description

and is subject to change without notice.

Features

Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
-40oC ~ 85oC Operation Package Type : 54_Pin TSOPII This pr.

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Other Datasheets by Hynix Semiconductor

H57V2582GTR-60C - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60I - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60L - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75C - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75I - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75J - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

Published: Oct 11, 2014 |