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H57V2582GTR-75J - 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

Download the H57V2582GTR-75J datasheet PDF. This datasheet also covers the H57V2582GTR-60I variant, as both devices belong to the same 256mb synchronous dram based on 8m x 4bank x8 i/o family and are provided as variant models within a single manufacturer datasheet.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface Low Voltage interface to reduce I/O power 8,192 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
  • -40oC ~ 85oC Operation Package Type : 54_Pin TSOPII This pr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H57V2582GTR-60I-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H57V2582GTR-75J
Manufacturer SK Hynix
File Size 227.17 KB
Description 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Datasheet download datasheet H57V2582GTR-75J Datasheet

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Other Datasheets by SK Hynix

Part Number Description
H57V2582GTR-75C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-75L 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 8,388,608 x 8 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Aug. 2009 1 111 Synchronous DRAM Memory 256Mbit H57V2582GTR-xxI Series Document Title 256Mbit (32M x8) Synchronous DRAM Revision History Revision No. 0.1 1.0 History Preliminary Release Draft Date Jun. 2009 Aug. 2009 Remark Rev 1.0 / Aug.