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H57V2622GMR - 256Mb Dual Die Synchronous DRAM

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Hynix Semiconductor

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H57V2622GMR 256Mb Dual Die Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – H57V2622GMR

Datasheet Details

Part number	H57V2622GMR
Manufacturer	Hynix Semiconductor
File Size	394.20 KB
Description	256Mb Dual Die Synchronous DRAM
Datasheet	H57V2622GMR Datasheet
Additional preview pages of the H57V2622GMR datasheet.

H57V2622GMR Product details

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp. : 0oC ~ 70oC, Industrial Temp. : -40oC ~ 85oC.
This product is in compliance with the directive pertaining of RoHS.

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Published: Sep 23, 2010 |