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H57V2622GMR Datasheet 256mb Dual Die Synchronous Dram

Manufacturer: SK Hynix

Overview: .. 256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Standard SDRAM Protocol Uses 2pcs of 128Mb Monolithic Die Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compatible with LVTTL interface 4096 Refresh cycles / 64ms Programmable CAS latency of 2 or 3 Programmable Burst Length and Burst Type Operating Temp. - Commercial Temp. : 0oC ~ 70oC, Industrial Temp. : -40oC ~ 85oC.
  • This product is in compliance with the directive pertaining of RoHS.

More Datasheets from SK Hynix

Part Number Description
H57V2622GMR-60X 256Mb Dual Die Synchronous DRAM
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H57V2562GFR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2562GTR 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2582GTR 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60C 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60I 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
H57V2582GTR-60J 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

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