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H5MS2562JFR-E3M - Mobile DDR SDRAM 256Mbit (16M x 16bit)

Download the H5MS2562JFR-E3M datasheet PDF. This datasheet also covers the H5MS2562JFR variant, as both devices belong to the same mobile ddr sdram 256mbit (16m x 16bit) family and are provided as variant models within a single manufacturer datasheet.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

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Note: The manufacturer provides a single datasheet file (H5MS2562JFR-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / July. 2009 1 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Document Title 256Mbit (4Bank x 4M x 16bits) MOBILE DDR SDRAM Revision History Revision No. 0.1 0.2 1.0 1.1 1.2 - Initial Draft - IDD Specification updated - The final version - Insert DDR370 DC/AC Characteristics - Omit a typo in package information History Draft Date May 2008 May 2008 Nov. 2008 Apr. 2009 July.