H5TQ1G83TFR-xxC Overview
Description
The H5TQ1G43TFR-xxC, H5TQ1G83TFR-xxC are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.
Key Features
- VDD=VDDQ=1.5V +/- 0.075V
- Fully differential clock inputs (CK, CK) operation
- Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
- Differential Data Strobe (DQS, DQS)
- 7.8 µs at 0oC ~ 85 oC
- On chip DLL align DQ, DQS and DQS transition with CK
- 3.9 µs at 85oC ~ 95 oC transition
- Auto Self Refresh supported
- DM masks write data-in at the both rising and falling edges of the data strobe
- All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
