H5TQ4G83EFR Datasheet (4Gb DDR3 SDRAM)

Part: H5TQ4G83EFR
Manufacturer: SK Hynix
Size: 430.73 KB

H5TQ4G83EFR Key Features

VDD=VDDQ=1.5V +/- 0.075V
Fully differential clock inputs (CK, CK) operation
Differential Data Strobe (DQS, DQS)
On chip DLL align DQ, DQS and DQS transition with CK transition
DM masks write data-in at the both rising and falling edges of the data strobe
All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
Programmable additive latency 0, CL-1, and CL-2 supported
Programmable burst length 4/8 with both nibble sequential and interleave mode
BL switch on the fly
8banks

Other H5TQ4G83EFR Datasheets

Manufacturer	Part Number	Description
SK Hynix	H5TQ4G83CFR-xxC	4Gb DDR3 SDRAM
SK Hynix	H5TQ4G83CFR-xxI	4Gb DDR3 SDRAM
SK Hynix	H5TQ4G83CFR-xxJ	4Gb DDR3 SDRAM
SK Hynix	H5TQ4G83CFR-xxL	4Gb DDR3 SDRAM
SK Hynix	H5TQ4G83MFR-xxC	4Gb DDR3 SDRAM

H5TQ4G83EFR Description

SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.