HMT151R7TFR4C Datasheet | SK Hynix

240pin DDR3 SDRAM Registered DIMM ..net DDR3 SDRAM Registered DIMM Based on 1Gb T-die HMT112R7TFR8C HMT125R7TFR8C HMT125R7TFR4C HMT151R7TFR8C HMT151R7TFR4C - Hynix Semiconductor reserves the right to change products or specifications without notice Rev. 0.1 / Dec. 2009 Revision History Revision No. 0.1 History Initial Release Draft Date Dec. 2009 Remark Preliminary Rev. 0.1 / Dec. 2009 Description Hynix Registered DDR3 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations. Features - - - - - - - - - - - - - Power Supply: VDD=1.5V (1.425V to 1.575V) VDDQ = 1.5V (1.425V to 1.575V) Backward patible with 1.5V DDR3 Memory Module VDDSPD=3.0V to 3.6V Functionality and operations ply with the DDR3L SDRAM datasheet 8 internal banks Data transfer rates: PC3L-10600, PC3L-8500 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Supports ECC error correction and detection On-Die Termination (ODT) Temperature sensor with integrated SPD - This product is in pliance with the Ro HS directive. Ordering Information Part Number HMT112R7TFR8C-G7/H9 HMT125R7TFR8C-G7/H9 HMT125R7TFR4C-G7/H9 HMT151R7TFR4C-G7/H9 HMT151R7TFR8C-G7 Density 1GB 2GB 2GB 4GB 4GB Organization 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 ponent position 128Mx8(H5TQ1G83TFR)- 9 128Mx8(H5TQ1G83TFR)- 18 256Mx4(H5TQ1G43TFR)- 18 256Mx4(H5TQ1G43TFR)- 36 128Mx8(H5TQ1G83TFR)- 36 # of ranks 1 2 2 2 4 FDHS X X X O O - In order to uninstall FDHS, please contact sales administrator Rev. 0.1 / Dec. 2009 Key Parameters MT/s DDR3-1066 DDR3-1333 Grade -G7 -H9 t CK (ns) 1.875 1.5 CAS Latency (t CK) 7 9 t RCD (ns) 13.125 13.5 t RP (ns) 13.125 13.5 t RAS (ns) 37.5 36 t RC (ns) 50.625 49.5 CL-t RCD-t RP...