HMT325R7CFR8A Datasheet | SK Hynix

Description Hynix Registered DDR3 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations. Features - - - - - - - - - - - - Power Supply: VDD=1.35V (1.283V to 1.45V) VDDQ = 1.35V (1.283V to 1.45V) VDDSPD=3.0V to 3.6V Functionality and operations ply with the DDR3L SDRAM datasheet 8 internal banks Data transfer rates: PC3-12800, PC3-10600, PC3-8500 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Supports ECC error correction and detection On-Die Termination (ODT) Temperature sensor with integrated SPD - This product is in pliance with the Ro HS directive. Ordering Information Part Number HMT325R7CFR8A-H9/PB HMT351R7CFR8A-H9/PB HMT351R7CFR4A-H9/PB HMT31GR7CFR8A-G7/H9 HMT31GR7CFR4A-H9/PB Density 2GB 4GB 4GB 8GB 8GB Organization 256Mx72 512Mx72 512Mx72 1Gx72 1Gx72 ponent position 256Mx8(H5TC2G83CFR)- 9 256Mx8(H5TC2G83CFR)- 18 512Mx4(H5TC2G43CFR)- 18 256Mx8(H5TC2G83CFR)- 36 512Mx4(H5TC2G43CFR)- 36 # of ranks 1 2 1 4 2 FDHS X X X O O - In order to uninstall FDHS, please contact sales administrator Rev. 0.1 / Aug. 2011 Key Parameters MT/s DDR3-1066 DDR3-1333 DDR3-1600 Grade -G7 -H9 -PB t CK (ns) 1.875 1.5 1.25 CAS Latency (t CK) 7 9 11 t RCD (ns) 13.125 13.5 13.75 t RP (ns) 13.125 13.5 13.75 t RAS (ns) 37.5 36 35 t RC (ns) 50.625 49.5 48.75 CL-t RCD-t RP 7-7-7 9-9-9 11-11-11 Speed Grade Frequency [MHz] Grade CL6 -G7 -H9 -PB 800 800 800 CL7 1066 1066 1066 CL8 1066 1066 1066 1333 1333 1333 1333 1600 CL9 CL10 CL11 Remark Address Table 2GB(1Rx8) Refresh Method Row Address Column Address Bank Address Page Size 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB 4GB(2Rx8) 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB 4GB(1Rx4) 8K/64ms A0-A14 A0-A9,A11 BA0-BA2 1KB 8GB(4Rx8) 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB...