HMT325S6BFR6C Datasheet | SK Hynix

Description Hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices. These Unbuffered DDR3 SDRAM DIMMs are intended for use as main memory when installed in systems such as mobile personal puters. Features - VDD=1.5V +/- 0.075V - VDDQ=1.5V +/- 0.075V - VDDSPD=3.0V to 3.6V - Functionality and operations ply with the DDR3 SDRAM datasheet - 8 internal banks - Data transfer rates: PC3-10600, PC3-8500, or PC3-6400 - Bi-directional Differential Data Strobe - 8 bit pre-fetch - Burst Length (BL) switch on-the-fly: BL 8 or BC (Burst Chop) 4 - On Die Termination (ODT) supported - Ro HS pliant - This product is in pliance with the Ro HS directive. Ordering Information Part Number HMT312S6BFR6C-G7/H9/PB HMT325S6BFR6C-G7/H9/PB HMT325S6BFR8C-G7/H9/PB HMT351S6BFR8C-G7/H9/PB Density 1GB 2GB 2GB 4GB Organization 128Mx64 256Mx64 256Mx64 512Mx64 ponent position 128Mx16(H5TQ2G63BFR)- 4 128Mx16(H5TQ2G63BFR)- 8 256Mx8(H5TQ2G83BFR)- 8 256Mx8(H5TQ2G83BFR)- 16 2 # of ranks 1 2 Rev. 0.2 / Feb. 2010 Datasheet pdf - http://..net/ .Data Sheet.co.kr Key Parameters MT/s DDR3-1066 DDR3-1333 DDR3-1600 Grade -G7 -H9 -PB t CK (ns) 1.875 1.5 1.25 CAS Latency (t CK) 7 9 11 t RCD (ns) 13.125 13.5 13.75 t RP (ns) 13.125 13.5 13.75 t RAS (ns) 37.5 36 35 t RC (ns) 50.625 49.5 48.75 CL-t RCD-t RP 7-7-7 9-9-9 11-11-11 Speed Grade Frequency [MHz] Grade CL6 -G7 -H9 -PB 800 800 800 CL7 1066 1066 1066 CL8 1066 1066 1066 1333 1333 1333 1333 1600 CL9 CL10 CL11 Remark Address Table 1GB(1Rx16) Refresh Method Row Address Column Address Bank Address Page Size 8K/64ms A0-A13 A0-A9 BA0-BA2 2KB 2GB(2Rx16) 8K/64ms A0-A13 A0-A9 BA0-BA2 2KB 2GB(1Rx8) 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB 4GB(2Rx8) 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB Rev. 0.2 / Feb. 2010 Datasheet pdf - http://..net/ .Data Sheet.co.kr Pin Descriptions Pin Name CK[1:0] CK[1:0] CKE[1:0] RAS CAS WE S[1:0] A[9:0],A11, A[15:13]...