HMT325S6CFR8C Datasheet | SK Hynix

Description Hynix Unbuffered Small Outline DDR3 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices. These Unbuffered DDR3 SDRAM SODIMMs are intended for use as main memory when installed in systems such as mobile personal puters. Features - VDD=1.5V +/- 0.075V - VDDQ=1.5V +/- 0.075V - VDDSPD=3.0V to 3.6V - Functionality and operations ply with the DDR3 SDRAM datasheet - 8 internal banks - Data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 - Bi-directional Differential Data Strobe - 8 bit pre-fetch - Burst Length (BL) switch on-the-fly: BL 8 or BC (Burst Chop) 4 - On Die Termination (ODT) supported - Ro HS pliant - This product is in pliance with the Ro HS directive. Ordering Information Part Number HMT325S6CFR8C-G7/H9/PB HMT351S6CFR8C-G7/H9/PB Density 2GB 4GB Organization 256Mx64 512Mx64 ponent position 256Mx8(H5TQ2G83CFR)- 8 256Mx8(H5TQ2G83CFR)- 16 # of ranks 1 2 Rev. 0.2 / Aug. 2011 Key Parameters MT/s DDR3-1066 DDR3-1333 DDR3-1600 Grade -G7 -H9 -PB t CK (ns) 1.875 1.5 1.25 CAS Latency (t CK) 7 9 11 t RCD (ns) 13.125 13.5 13.75 t RP (ns) 13.125 13.5 13.75 t RAS (ns) 37.5 36 35 t RC (ns) 50.625 49.5 48.75 CL-t RCD-t RP 7-7-7 9-9-9 11-11-11 Speed Grade Frequency [MHz] Grade CL5 -G7 -H9 -PB 667 667 667 CL6 800 800 800 CL7 1066 1066 1066 CL8 1066 1066 1066 1333 1333 1333 1333 1600 CL9 CL10 CL11 Remark Address Table 2GB(1Rx8) Refresh Method Row Address Column Address Bank Address Page Size 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB 4GB(2Rx8) 8K/64ms A0-A14 A0-A9 BA0-BA2 1KB Rev. 0.2 / Aug. 2011 Pin Descriptions Pin Name CK[1:0] CK[1:0] CKE[1:0] RAS CAS WE S[1:0] A[9:0],A11, A[15:13] A10/AP A12/BC BA[2:0] ODT[1:0] SCL SDA SA[1:0] Description Clock Input, positive line Clock Input, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge Address...