HY27SS16121M Datasheet | SK Hynix

description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics (3V Product) 0.5 t CRY Before After 60 + tr 70 + tr t REA@ID Read 35 45 Jun. 01. 2004 Preliminary 3) Delete Cache Program 0.6 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure Oct. 20. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.6 / Oct. 2004 1 HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data .. - Pinout patibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read OPTION : HY27USXX121M - 3.3V device: VCC = 2.7 to 3.6V - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121M AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download Memory Cell Array - 528Mbit = 528 Bytes x 32 Pages x 4,096 Blocks SERIAL NUMBER OPTION HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions PAGE SIZE - x8 device : (512 + 16 spare) Bytes : HY27(U/S)S08121M - x16 device: (256 + 8 spare) Words : HY27(U/S)S16121M DATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data Retention BLOCK SIZE - x8 device: (16K + 512 spare) Bytes - x16 device: (8K + 256 spare) Words PACKAGE - HY27US(08/16)121M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27US(08/16)121M-T...