HY27UA1G1M
HY27UA1G1M is 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory manufactured by SK Hynix.
description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 4) Add the description of System Interface Using /CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics 0.4 t CRY Before After 60 + tr 70 + tr t REA@ID Read 35 45 Jun. 01. 2004 Preliminary 15 20 t REH 15 20 May. 14. 2004 Preliminary Apr. 29. 2004 Preliminary
History
Draft Date
Nov. 28. 2003 Mar. 11. 2004
Remark
Preliminary Preliminary
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3) Delete Cache Program 0.5 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure Oct. 20. 2004
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.5 / Oct. 2004 1
HY27UA(08/16)1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout patibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
Sequential Row Read Option
: HY27UAXX1G1M
..
- 3.3V device: VCC = 2.7 to 3.6V
1.8V Operation Product : TBD
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
- 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M
Memory Cell Array
- 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks
SERIAL NUMBER OPTION HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
PAGE SIZE
- x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M
- x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1M
DATA...
