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HY27UH088G2M - 8G-Bit NAND Flash Memory

General Description

The HYNIX HY27UH088G(2/D)M series is a 1Gx8bit with spare 32Mx8 bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • 9) Change AC Characteristics - Errata is deleted. tWC Before After 0.4 - tR is change tR Before After 25us 30us 60ns 50ns tWP 35ns 25ns tWH 20ns 15ns Sep. 16. 2005 Preliminary 10) Change DC Characteristics (Table 8) - Operation Current ICC1 Typ Before After 30 40 ICC2 Typ 30 40 ICC3 Typ 30 40 ILI Max ILO Max ± 20 ± 20 ± 40 ± 40 0.5 1) Delete Concurrent Operation. Oct. 05. 2005 Preliminary Rev 0.5 / Oct. 2005 2 Preliminary HY27UH088G(2/D)M Series 8Gbit (1Gx8bit) NAND Flash.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w e e Document h Title 8Gbit (1Gx8bit) S NAND Flash Memory a at Revision .D History w w Revision No. 0.0 U 4 t . m o c Preliminary HY27UH088G(2/D)M Series 8Gbit (1Gx8bit) NAND Flash History Draft Date May. 13. 2005 Remark Preliminary Initial Draft. 1) Add Errata tWH tWP 25 35 tWC 50 60 0.1 Specification Relaxed value 15 20 May. 23. 2005 1) Correct the valid Blocks Number. 0.2 Valid Blocks (max) Before After 8,196 8,192 1) Add tRSBY (Table11) - tRSBY (Dummy Busy Time for Cache Read) 0.3 - tRSBY is 5us (typ.) 2) Edit figure 18, 19 1) Add TLGA package 3) Correct Extended Read Status Register Commands (Table. 19) - Figures & texts are added. Test Conditions (ILI, ILO) VIN=VOUT=0 to 3.6V 2) Correct the test Conditions (DC Characteristics table) 0.