HY29F002TT-70 Datasheet | SK Hynix

FEATURES n 5 Volt Read, Program, and Erase - Minimizes system-level power requirements n High Performance - Access times as fast as 45 ns n Low Power Consumption - 20 m A typical active read current - 30 m A typical program/erase current - 1 µA typical CMOS standby current n patible with JEDEC Standards - Package, pinout and mand-set patible with the single-supply Flash device standard - Provides superior inadvertent write protection n Sector Erase Architecture - Boot sector architecture with top boot block location - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and three 64K byte sectors - A mand can erase any bination of sectors - Supports full chip erase n Erase Suspend/Resume - Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased GENERAL DESCRIPTION The HY29F002T is an 2 Megabit, 5 volt-only CMOS Flash memory organized as 262,144 (256K) bytes. The device is offered in industrystandard 32-pin TSOP and PLCC packages. The HY29F002T can be programmed and erased in-system with a single 5-volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a high voltage power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as fast as 55ns over the full operating voltage range of 5.0 volts ± 10% are offered for timing patibility with the zero wait state requirements of high speed microprocessors. A 45ns version operating over 5.0 volts ± 5% is also available. To eliminate bus contention, the 18 A[17:0] RESET# CE# OE# WE# DQ[7:0] 8 n Sector Protection - Any bination of sectors may be locked to prevent program or erase operations within those sectors n Temporary Sector Unprotect - Allows changes in locked sectors (requires high voltage on RESET# pin) n Internal Erase Algorithm - Automatically erases a sector, any bination of sectors, or the entire chip n Internal...