HY51V18163HGJ Overview
The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high speed access mode.
HY51V18163HGJ Key Features
- Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) patible inpu
- JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II (400mil) Single power supply of 3.3V +/- 0.3V Battery back u
- tCAC 13ns 15ns 18ns
- Power dissipation
- Refresh cycle