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HY51V18163HGT - 1M x 16Bit EDO DRAM

General Description

The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

Key Features

  • Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part No HY51V(S)18163HG/HGL-5 HY51V(S)18163HG/HGL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns.
  • JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II.

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HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163...

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eneration dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. FEATURES • • • • • Extended Data Out Mode capability Read-modify-write capability Multi-

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