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HY51V18163HGT-6 - 1M x 16Bit EDO DRAM

Product Overview

Hynix Semiconductor

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HY51V18163HGT-6 1M x 16Bit EDO DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY51V18163HGT-6

Datasheet Details

Part number	HY51V18163HGT-6
Manufacturer	Hynix Semiconductor
File Size	107.49 KB
Description	1M x 16Bit EDO DRAM
Datasheet	HY51V18163HGT-6 Datasheet
Additional preview pages of the HY51V18163HGT-6 datasheet.

Product details

Description

The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit.

Features

Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part No HY51V(S)18163HG/HGL-5 HY51V(S)18163HG/HGL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns.
JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II.

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Other Datasheets by Hynix Semiconductor

HY51V18163HGT-5 - 1M x 16Bit EDO DRAM
HY51V18163HGT-7 - 1M x 16Bit EDO DRAM
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HY51V18163HGJ-6 - 1M x 16Bit EDO DRAM

Published: Apr 2, 2005 |