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HY51V65163HG Datasheet

Manufacturer: SK Hynix
HY51V65163HG datasheet preview

Datasheet Details

Part number HY51V65163HG
Datasheet HY51V65163HG_HynixSemiconductor.pdf
File Size 96.60 KB
Manufacturer SK Hynix
Description 4M x 16Bit EDO DRAM
HY51V65163HG page 2 HY51V65163HG page 3

HY51V65163HG Overview

This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation.

HY51V65163HG Key Features

  • Extended data out operation Read-modify-write capability Multi-bit parallel test capability LVTTL(3.3V) patible inputs a
  • JEDEC standard pinout 50pin plastic SOJ/TSOP-II(400mil) Single power supply of 3.3V +/- 10% Battery back up operation(L-
  • Fast access time and cycle time
  • Power dissipation
  • Refresh cycle
  • /RAS only, CBR and hidden refresh
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HY51V18163HGJ 1M x 16Bit EDO DRAM
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HY51V65163HG Distributor

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