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HY51V65163HGJ-6 - 4M x 16Bit EDO DRAM

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Hynix Semiconductor

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HY51V65163HGJ-6 4M x 16Bit EDO DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY51V65163HGJ-6

Datasheet Details

Part number	HY51V65163HGJ-6
Manufacturer	Hynix Semiconductor
File Size	96.60 KB
Description	4M x 16Bit EDO DRAM
Datasheet	HY51V65163HGJ-6 Datasheet
Additional preview pages of the HY51V65163HGJ-6 datasheet.

HY51V65163HGJ-6 Product details

Description

This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs.

Extended data out mode is a kind of page mode which is useful for the read operation.

Features

are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability.

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Published: Apr 2, 2005 |