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HY51VS17403HG - 4M x 4Bit EDO DRAM

General Description

The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.

HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

Key Features

  • include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

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HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG...

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neration dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply 3.3V +/- 0.

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