HY5DV281622DTP
description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Sep. 2003
Revision History
Revision No.
History
0.1 Defined target spec.
0.2 Supports Pb free parts for each speed grade
Draft Date Remark Aug. 2003 Sep. 2003
Rev. 0.2 / Sep. 2003
DESCRIPTION
The Hynix HY5DV281622 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.
The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it....
