HY5V22GF Overview
The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32. HY5V22G is offering fully synchronous operation referenced to a positive edge of the clock.
HY5V22GF Key Features
- JEDEC standard 3.3V power supply All device pins are patible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch Al
- Internal four banks operation
- Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks
- Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
- ORDERING INFORMATION