Datasheet4U Logo Datasheet4U.com

HY5V22GF - 4 Banks x 1M x 32Bit Synchronous DRAM

Description

The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.

HY5V22G is organized as 4banks of 1,048,576x32.

HY5V22G is offering fully synchronous operation referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V power supply All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Bu.

📥 Download Datasheet

Datasheet preview – HY5V22GF

Datasheet Details

Part number HY5V22GF
Manufacturer Hynix Semiconductor
File Size 379.64 KB
Description 4 Banks x 1M x 32Bit Synchronous DRAM
Datasheet download datasheet HY5V22GF Datasheet
Additional preview pages of the HY5V22GF datasheet.

📁 Similar Datasheet

  • HY5-P - Current Transducers HY 5 to 25-P (LEM)
  • HY50-P - Current Transducer HY 50-P (LEM)
  • HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
  • HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
  • HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
  • HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)
  • HY5110A - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY5110NA2W - N-Channel Enhancement Mode MOSFET (HUAYI)
Other Datasheets by Hynix Semiconductor
  • HY5V22F - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22FP - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22LF - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22LFP - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V26CF - (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM
  • HY5V26CLF - (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM
  • HY5V26CSF - (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM
  • HY5V52F - 4Banks x 2M x 32bits Synchronous DRAM

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32. HY5V22G is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Published: |