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HY5V22GF - 4 Banks x 1M x 32Bit Synchronous DRAM

General Description

The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth.

HY5V22G is organized as 4banks of 1,048,576x32.

HY5V22G is offering fully synchronous operation referenced to a positive edge of the clock.

Key Features

  • JEDEC standard 3.3V power supply All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Bu.

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Datasheet Details

Part number HY5V22GF
Manufacturer SK Hynix
File Size 379.64 KB
Description 4 Banks x 1M x 32Bit Synchronous DRAM
Datasheet download datasheet HY5V22GF Datasheet

Full PDF Text Transcription for HY5V22GF (Reference)

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www.DataSheet4U.com HY5V22GF 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY5V22G is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory...

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a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V22G is organized as 4banks of 1,048,576x32. HY5V22G is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

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