HY62LF16804B Datasheet | SK Hynix

description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May.2001 Hynix Semiconductor HY62LF16804B Series Preliminary DESCRIPTION The HY62LF16804B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits. The HY62LF16804B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage Speed No. (V) (ns) HY62LF16804B-C 2.3~2.7 70/85/100 HY62LF16804B- I 2.3~2.7 70/85/100 Note 1. C : mercial, I : Industrial 2. Current value is max. FEATURES - Fully static operation and Tri-state output - TTL patible inputs and outputs - Battery backup(LL/SL-part) - 1.2V(min) data retention - Standard pin configuration - 48-f BGA Operation Current/Icc(m A) 3 3 Standby Current(u A) LL SL 20 8 20 8 Temperature (°C) 0~70 -45~85 PIN CONNECTION ( Top View ) 1 2 3 4 A1 A4 A6 5 A2 NC 6 A0 BLOCK DIAGRAM ROW DECODER I/O1 SENSE AMP A B C D E F G H /LB /OE A0 IO9 /UB A3 IO10 IO11 A5 /CS IO1 ADD INPUT BUFFER PRE DECODER COLUMN DECODER I/O8 DATA I/O BUFFER IO2 IO3 IO4 Vcc Vss IO12 A17 A7 MEMORY ARRAY 256K x 16 WRITE DRIVER I/O9 BLOCK DECODER Vcc IO13 Vss A16 IO5 Vss IO15 IO14 A14 A15 IO6 IO7 A18 I/O16 IO16 NC A18 A8 A12 A13 /WE IO8 A9 A10 A11 NC /CS /OE /LB /UB...