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HY62LF16804A - 512Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hynix Semiconductor Inc not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(LL/SL-part) - 1.2V(min) data retention.
  • Standard pin configuration - 48-uBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 25 8 25 8 Temperature (°C) 0~70 -45~85 PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HY62LF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No 04 History Initial Revision History Insert Revised - Reliability Spec Deleted Change AC Characteristics - tCLZ : 10/10/20 ---> 10/10/10 - tBLZ : 5/5/5 ---> 10/10/10 Part Number is changed - HY62LF16803A --> HY62LF16804A Marking Instruction is inserted Test Condition Changed - ILO / ISB / ISB1 / VDR / ICCDR Marking Istruction Inserted Change Logo - Hyundai à Hynix Change DC Parameter - Isb1(LL) : 30uA à - Isb1(Typ) : 8uA à - Icc1(1us) : 5mA à Change Data Retention - IccDR(LL) : 25uA à Change AC Parameter - tOE : 40ns à 25uA 1uA 4mA 15uA 35ns@70ns Draft Date Jul.02.2000 Remark Preliminary 05 Oct.23.2000 Preliminary 06 Nov.