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HY62SF16806A - 512Kx16bit full CMOS SRAM

Description

and is subject to change without notice.

Hyundai Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs The HY62SF16806A is a high speed, super low.
  • Battery backup(LL/SL-part) power and 8Mbit full CMOS SRAM organized as - 1.2V(min) data retention 524,288 words by 16bits. The HY62SF16806A.
  • Standard pin configuration uses high performance full CMOS process - 48-uBGA technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high de.

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Datasheet Details

Part number HY62SF16806A
Manufacturer SK Hynix
File Size 182.08 KB
Description 512Kx16bit full CMOS SRAM
Datasheet download datasheet HY62SF16806A Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix AC Parameter is changed - tCHZ : 30ns --> 20ns - tBHZ : 30ns --> 20ns - tOHZ : 30ns --> 20ns Change DC Parameter - Icc1(1us) : 5mA à 4mA Change Data Retention - IccDR(LL) : 25uA à 15uA Change AC Parameter - tOE : 40ns à 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary 02 Jul.18.2001 03 Jan.28.2002 This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.03 /Jan.
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