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HY62SF16806A - 512Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hyundai Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs The HY62SF16806A is a high speed, super low.
  • Battery backup(LL/SL-part) power and 8Mbit full CMOS SRAM organized as - 1.2V(min) data retention 524,288 words by 16bits. The HY62SF16806A.
  • Standard pin configuration uses high performance full CMOS process - 48-uBGA technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high de.

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Full PDF Text Transcription for HY62SF16806A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62SF16806A. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 ...

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uper Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix AC Parameter is changed - tCHZ : 30ns --> 20ns - tBHZ : 30ns --> 20ns - tOHZ : 30ns --> 20ns Change DC Parameter - Icc1(1us) : 5mA à 4mA Change Data Retention - IccDR(LL) : 25uA à 15uA Change AC Parameter - tOE : 40ns à 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary 02 Jul.18.2001 03 Jan.28.2002 This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses a

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