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HY62SF16806B - 512Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hyundai Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(LL/SL-part) - 1.2V(min) data retention.
  • Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 15 8 15 8 Temperature (°C) 0~70 -40~85 PIN.

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Full PDF Text Transcription for HY62SF16806B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62SF16806B. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY62SF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 His...

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uper Low Power Full CMOS slow SRAM Revision History Revision No 00 History Initial Draft Draft Date May.29.2001 Remark Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May. 2001 Hynix Semiconductor HY62SF16806B Preliminary DESCRIPTION The HY62SF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16806B uses high performance full CMOS process technology and is designed for high speed and lo

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