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HY62SF16806B - 512Kx16bit full CMOS SRAM

Description

and is subject to change without notice.

Hyundai Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(LL/SL-part) - 1.2V(min) data retention.
  • Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 15 8 15 8 Temperature (°C) 0~70 -40~85 PIN.

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Datasheet preview – HY62SF16806B

Datasheet Details

Part number HY62SF16806B
Manufacturer SK Hynix
File Size 287.71 KB
Description 512Kx16bit full CMOS SRAM
Datasheet download datasheet HY62SF16806B Datasheet
Additional preview pages of the HY62SF16806B datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com HY62SF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 History Initial Draft Draft Date May.29.2001 Remark Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May. 2001 Hynix Semiconductor HY62SF16806B Preliminary DESCRIPTION The HY62SF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16806B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology.
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