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HY62WT08081E - HY62WT08081E Series 32Kx8bit CMOS SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-part 10 5 20 8 20 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Industrial) Product No. HY62WT08081E-C Voltage Speed Operation (V) (ns) Current(mA) 4.5~5.5 55.

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Datasheet Details

Part number HY62WT08081E
Manufacturer SK Hynix
File Size 205.31 KB
Description HY62WT08081E Series 32Kx8bit CMOS SRAM
Datasheet download datasheet HY62WT08081E Datasheet

Full PDF Text Transcription for HY62WT08081E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62WT08081E. For precise diagrams, and layout, please refer to the original PDF.

HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Revised - Change LL-Part ...

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on History Revision No 00 01 History Initial Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Revised - Iccdr Limit Add : 2uA @40°C Draft Date Feb.05.2001 Feb.13.2001 Remark Preliminary Final 02 Feb.21.2001 Final 03 Apr.30.2001 Final 04 May.23.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implie

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