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HY63V8400 - 512K x 8-Bit CMOS Fast SRAM

General Description

The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-bits.

The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than.

address access time at read cycle.

Key Features

  • Single 3.3V±0.3V Power Supply Fully static operation and Tri-state output TTL compatible inputs and outputs Low data Retention Voltage: - 2.0V(min).
  • L-ver. Only.
  • Center Power/Ground Pin Configuration.
  • Standard pin configuration - 36pin 400mil SOJ - 44pin 400mil TSOP-ll Product No. HY63V8400 HY63V8400 HY63V8400 Supply Voltage(V) 3.3 3.3 3.3 Speed (ns) 10 12 15 Operation Current(mA) 200 190 180 Standby Current(mA) L 10 10 10 1.

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Datasheet Details

Part number HY63V8400
Manufacturer SK Hynix
File Size 124.21 KB
Description 512K x 8-Bit CMOS Fast SRAM
Datasheet download datasheet HY63V8400 Datasheet

Full PDF Text Transcription for HY63V8400 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY63V8400. For precise diagrams, and layout, please refer to the original PDF.

HY63V8400 Series 512Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V8400 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8-...

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igh-speed Static Random Access Memory organized as 524,288 words by 8-bits. The HY63V8400 uses eight common input and output lines and has an output enable pin which operates faster than. address access time at read cycle. The device is fabricated using Hyundai's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications FEATURES • • • • Single 3.3V±0.3V Power Supply Fully static operation and Tri-state output TTL compatible inputs and outputs Low data Retention Voltage: - 2.0V(min) –L-ver.

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