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HY67V161610D - 2 Banks x 512K x 16 Bit Synchronous DRAM

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Hynix Semiconductor

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HY67V161610D 2 Banks x 512K x 16 Bit Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY67V161610D

Datasheet Details

Part number	HY67V161610D
Manufacturer	Hynix Semiconductor
File Size	101.43 KB
Description	2 Banks x 512K x 16 Bit Synchronous DRAM
Datasheet	HY67V161610D Datasheet
Additional preview pages of the HY67V161610D datasheet.

Product details

Description

and is subject to change without notice.

Features

Single 3.0V to 3.6V power supply Note1).
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequence Burst All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch.
All inputs and outputs referenced to positive edge of system clock - 1, 2, 4 and 8 for Interleave Burst.
Programmable C.

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Published: Feb 4, 2007 |