HYMD232M646CF6-M Datasheet | SK Hynix

32Mx64 bits Unbuffered DDR SO-DIMM HYMD232M646C(L)F6-J/M/K/H/L Revision History No. 0.1 0.2 0.3 Defined Target Spec. Defined Cap. Value 1) Reflected a "notational" change in module thickness on page 17 - Not Real ! 2) Corrected some typos .. History Date Nov. 2003 Jan. 2004 Apr. 2004 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3 / Apr. 2004 1 32Mx64 bits Unbuffered DDR SO-DIMM HYMD232M646C(L)F6-J/M/K/H/L DESCRIPTION Hynix HYMD232M646C(L)F6-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232M646C(L)F6-J/M/K/H/L series consists of eight 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 200pin glass-epoxy substrate. Hynix HYMD232M646C(L)F6-J/M/K/H/L series provide a high performance 8-byte interface in 67.60mm X 31.75mm form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD232M646C(L)F6-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are patible with SSTL_2. High speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance memory system. Hynix HYMD232M646C(L)F6-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial 2,048-bit EEPROM. The first...