H5TQ1G63DFR-xxL Overview
The H5TQ1G6(8)3DFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges...
H5TQ1G63DFR-xxL Key Features
- DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V
- DQ Ground supply : VSSQ = Ground
- Fully differential clock inputs (CK, CK) operation
- Differential Data Strobe (DQS, DQS)
- Programmable BL=4 supported (tCCD=2CLK) for Digital consumer
