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H9DA4GH4JJAMCR Datasheet NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)

Manufacturer: SK Hynix

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Overview

MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR http://www.DataSheet4U.

Key Features

  • [ MCP ].
  • Operation Temperature - -30oC ~ 85oC.
  • Packcage - 137-ball FBGA - 10.5x13.0mm2, 1.2t, 0.8mm pitch - Lead & Halogen Free [ NAND Flash ].
  • Multiplane Architecture.
  • Supply Voltage - Vcc = 1.7 - 1.95 V.
  • Memory Cell Array - (1K + 32) words x 64 pages x 4096 blocks.
  • Page Size - (1K+ 32 spare) Words.
  • Block Size - (64K + 2K spare) Words.
  • Page Read / Program - Random access : 25us (max. ) - Sequential access : 45ns (min. ) - Page program time : 250us (typ. ) -.