HY62256A-I Datasheet | Hyundai

DESCRIPTION The HY62256A/ HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A/ HY62256A-I has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application. FEATURES - - - - Fully static operation and Tri-state output TTL patible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention - Standard pin configuration - 28 pin 600 mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard and Reversed) Product Voltage Speed Operation Standby Current(u A) No. (V) (ns) Current(m A) L LL HY62256A 5.0 55/70/85 50 1m A 100 25 HY62256A-I 5.0 55/70/85 50 1m A 100 Note 1. E.T. : Extended Temperature, Normal : Normal Temperature 2. Current value is max. Temperature (¡É) 0~70(Normal) -40~85(E.T.) PIN CONNECTION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 /OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3 A4 A5 A6 A7 A12 A14 Vcc /WE A13 A8 A9 A11 /OE 14 13 12 11 10 9 8 7 6 5 4 3 2 1 15 16 17 18 19 20 21 22 23 24 25 26 27 28 A2 A1 A0 I/O1 I/O2 I/O3 Vss I/O4 I/O5 I/O6 I/O7 I/O8 /CS A10 PDIP TSOP-I(Standard) TSOP-I(Reversed) PIN DESCRIPTION Pin Name /CS /WE /OE A0 ~ A14 I/O1 ~...