ICONIC RF ICPB2002
The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology.| Part No. | ICPB2002 |
|---|---|
| Datasheet | ICPB2002 Download |
| Manufacturer | ICONIC RF |
| Description | Discrete Power GaN HEMT |
| Buy | Stock & Price |
FEATURES
● Frequency Range DC-12GHz● 41.5dBm Nominal P3dB
● Maximum PAE at 6GHz of 65%
● Drain Bias 28V
● Technology: GaN on SiC
● Lead-free and RoHS compliant
● Chip Dimensions: 0.81 x 1.14 x 0.10mm
APPLICATIONS
● Aerospace & Defense● Broadband Wireless Image
DESCRIPTION
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10 Output Power P3dB Bias Current dBm mA 41.5 50 41.5 50 41.5 50 PAE @ P3dB % 68 65 58 Gain @ P3dB dB 19.5 14 10 Recommended operating conditionsABSOLUTE MAXIMUM RATINGS
Drain Voltage (VDG) Drain Quiescent Current (ID) Drain current RF Drive (ID) Gate Voltage (VG) Power Dissipation (CW) Channel Temperature (Max) 12-32 V 0.05-0.125A 1A -2.6V 20W 225°C Drain to Gate Voltage (VDG) Gate Voltage Range (VG) Gate Current (IG) Power Dissipation (CW) 80 V -20V to 0V -2.5 to 7.5mA 30W CW Input Power +34dBm Channel Temperature 275°C Storage Temperature -65°C to +150°C Exceeding any one or combination of these limits may cause permanent damage to this device.
