Datasheet Details
| Part number | ICPB2002 |
|---|---|
| Manufacturer | ICONIC RF |
| File Size | 742.67 KB |
| Description | Discrete Power GaN HEMT |
| Datasheet | ICPB2002-ICONICRF.pdf |
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Overview: ICPB2002 | Discrete Power GaN HEMT 12 Watt.
| Part number | ICPB2002 |
|---|---|
| Manufacturer | ICONIC RF |
| File Size | 742.67 KB |
| Description | Discrete Power GaN HEMT |
| Datasheet | ICPB2002-ICONICRF.pdf |
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The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz.
The design is optimized for power and efficiency using field plate technology.
RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10 Output Power P3dB Bias Current dBm mA 41.5 50 41.5 50 41.5 50 PAE @ P3dB % 68 65 58 Gain @ P3dB dB 19.5 14 10 Remended operating conditions Absolute Maximum Ratings Drain Voltage (VDG) Drain Quiescent Current (ID) Drain current RF Drive (ID) Gate Voltage (VG) Power Dissipation (CW) Channel Temperature (Max) 12-32 V 0.05-0.125A 1A -2.6V 20W 225°C Drain to Gate Voltage (VDG) Gate Voltage Range (VG) Gate Current (IG) Power Dissipation (CW) 80 V -20V to 0V -2.5 to 7.5mA 30W CW Input Power +34dBm Channel Temperature 275°C Storage Temperature -65°C to +150°C Exceeding any one or bination of these limits may cause permanent damage to this device.
| Part Number | Description |
|---|---|
| ICPB2005 | Discrete Power GaN HEMT |
| ICPB1005 | Discrete Power GaN HEMT |
| ICPB1010 | Discrete Power GaN HEMT |
| ICPB1020 | Discrete Power GaN HEMT |
| ICP0349P | 2.7 - 3.5GHz 70W GaN PA MMIC |