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ICPB2005 - Discrete Power GaN HEMT

Datasheet Summary

Description

The ICPB2005 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz.

The design is optimized for power and efficiency using field plate technology.

Features

  • Frequency Range DC-12GHz.
  • 44.5dBm Nominal P3dB.
  • Maximum PAE at 6GHz of 65%.
  • Drain Bias 28V.
  • Technology: GaN on SiC.
  • Lead-free and RoHS compliant.
  • Chip Dimensions: 0.81 x 1.68 x 0.10mm.

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Datasheet preview – ICPB2005

Datasheet Details

Part number ICPB2005
Manufacturer ICONIC RF
File Size 767.14 KB
Description Discrete Power GaN HEMT
Datasheet download datasheet ICPB2005 Datasheet
Additional preview pages of the ICPB2005 datasheet.

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Full PDF Text Transcription

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ICPB2005 | Discrete Power GaN HEMT 25 Watt Features • Frequency Range DC-12GHz • 44.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V • Technology: GaN on SiC • Lead-free and RoHS compliant • Chip Dimensions: 0.81 x 1.68 x 0.10mm Applications • Aerospace & Defense • Broadband Wireless Image Description The ICPB2005 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz. The design is optimized for power and efficiency using field plate technology. RF Performance | Simulated Conditions unless otherwise stated | TA=25°C, VD=28V CW Typical Frequency GHz 3 6 10 Output Power P3dB Bias Current dBm mA 44.5 100 44.5 100 44.5 100 PAE @ P3dB % 68 Gain @ P3dB dB 19 65 57 13.5 9.
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