IC62LV51216L Datasheet PDF (512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM)

General Description

8.388,608 bit static RAMs organized as 524,288 words by 16 bits.

They are fabricated using ICSI's high-performance CMOS technology.

Key Features

High-speed access times: 55, 70, 100 ns.
CMOS low power operation ICC=18mA (typical).
operating ISB2=3µA (typical).
CMOS standby.
TTL compatible interface levels.
Single 2.7V-3.6V Vcc power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Available in the know good die from 44-pin TSOP-2 and 48-pin 8x.

Datasheet Details

Part number	IC62LV51216L
Manufacturer	ICSI
File Size	170.32 KB
Description	512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Datasheet	IC62LV51216L Datasheet

Part number

IC62LV51216L

Manufacturer

ICSI

File Size

170.32 KB

Description

512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM

Datasheet

IC62LV51216L Datasheet

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Other Datasheets by ICSI

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IC62LV51216LL	512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
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Part Number

Description

IC62LV51216LL

512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV5128L

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV5128LL

512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV1008L

1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM

IC62LV1008LL

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com IC62LV51216L IC62LV51216LL Document Title 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Draft Date Remark Initial Draft January 3,2002 1. Add CE2 pin for 48 pin TF-BGA September 2,2002 2. Change for ICC: 35 mA to 30 mA for 55 ns Industrial product 30 mA to 25 mA for 70 ns Industrial product 25 mA to 20 mA for 100 ns Industrial product 30 mA to 25 mA for 55 ns Commerical product 25 mA to 20 mA for 70 ns Commerical product 20 mA to 15 mA for 100 ns Commerical product 3. Change for ISB2: 20 µA to 15 µA for Commerical product 4. Change for IDR: 15 µA to 20 µA for Commerical/L product 6 µA to 13 µA for Commerical/LL product 20 µA to 30 µA for Industrial/L product 9 µA to 23 µA for Industrial/LL product 1.