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IC62LV51216LL - 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM

This page provides the datasheet information for the IC62LV51216LL, a member of the IC62LV51216L 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM family.

Datasheet Summary

Description

8.388,608 bit static RAMs organized as 524,288 words by 16 bits.

They are fabricated using ICSI's high-performance CMOS technology.

Features

  • High-speed access times: 55, 70, 100 ns.
  • CMOS low power operation ICC=18mA (typical).
  • operating ISB2=3µA (typical).
  • CMOS standby.
  • TTL compatible interface levels.
  • Single 2.7V-3.6V Vcc power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Available in the know good die from 44-pin TSOP-2 and 48-pin 8x.

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Datasheet preview – IC62LV51216LL

Datasheet Details

Part number IC62LV51216LL
Manufacturer ICSI
File Size 170.32 KB
Description 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Datasheet download datasheet IC62LV51216LL Datasheet
Additional preview pages of the IC62LV51216LL datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com IC62LV51216L IC62LV51216LL Document Title 512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A 0B History Draft Date Remark Initial Draft January 3,2002 1. Add CE2 pin for 48 pin TF-BGA September 2,2002 2. Change for ICC: 35 mA to 30 mA for 55 ns Industrial product 30 mA to 25 mA for 70 ns Industrial product 25 mA to 20 mA for 100 ns Industrial product 30 mA to 25 mA for 55 ns Commerical product 25 mA to 20 mA for 70 ns Commerical product 20 mA to 15 mA for 100 ns Commerical product 3. Change for ISB2: 20 µA to 15 µA for Commerical product 4. Change for IDR: 15 µA to 20 µA for Commerical/L product 6 µA to 13 µA for Commerical/LL product 20 µA to 30 µA for Industrial/L product 9 µA to 23 µA for Industrial/LL product 1.
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