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ID5S609F1 - High Side & Low Side Gate Driver

This page provides the datasheet information for the ID5S609F1, a member of the ID5S609 High Side & Low Side Gate Driver family.

Datasheet Summary

Description

The ID5S609/ID5S609F1 is a high voltage, high speed power MOSFET and IGBT driver based on P_sub P_epi process.

The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V.

Features

  •  Operation to +600 V  Typically 400mA/800mA Source/Sink current  3.3 V input logic compatible  dV/dt Immunity ±50 V/nsec  Gate drive supply range from 10 V to 20 V  UVLO for both channels  Cross-conduction prevention logic with 100ns internal fixed Dead time  Matched propagation delay for all channels.

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Datasheet preview – ID5S609F1

Datasheet Details

Part number ID5S609F1
Manufacturer IDRIVER
File Size 1.02 MB
Description High Side & Low Side Gate Driver
Datasheet download datasheet ID5S609F1 Datasheet
Additional preview pages of the ID5S609F1 datasheet.

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Full PDF Text Transcription

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ID5S609/ID5S609F1 High Side & Low Side Gate Drive IC General Description The ID5S609/ID5S609F1 is a high voltage, high speed power MOSFET and IGBT driver based on P_sub P_epi process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Features  Operation to +600 V  Typically 400mA/800mA Source/Sink current  3.
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