ID9S6015D Datasheet | IDRIVER

600V Half Bridge Gate Drive IC hh General Description The ID9S6015D is a wafer level production, which is a single phase high voltage power MOSFET and IGBT gate driver optimized to drive the gates of both high-side and low-side power transistors. The floating channel driver design can acmodate BUS voltages as high as 600 V. With a wide operation voltage range, high or low side gate drive voltage can be optimized for the best efficiency. Internal non-overlap circuitry further reduces switching losses by preventing simultaneous conduction of both transistors. The Under Voltage Lockout (UVLO) function ensures that both driver outputs are low when the supply voltage is low. Features  Fully operational to+600 V  Matched propagation delay for both channels  Floating channel designed for bootstrap operation  Gate drive supply range from 10 V to 20 V  UVLO for both channels  Cross Conduction Protection with 540 ns Internal Fixed Dead Time  Integrated bootstrap diode  Integrated gate on/off resistor  Built-in temperature-sensing Applications  3A and 5A IPM Order Information Part Number ID9S6015D Order Code ID9S6015D Package Wafer-level Rev 0.0 Type --- ID9S6015D PAICD Configuration 600V Half Bridge Gate Drive PAD Definitions PIN NAME VCC HIN LIN VSS VTS LO VS HO VB PIN FUNCTION Low side and main power supply Logic input for high side gate driver output Logic input for low side gate driver output Ground Temperature-sensing voltage output Low side gate drive output High side floating supply return High side gate drive output High side floating supply Rev 0.0 ID9S6015D Fu ICnctional Block Diagram Filter Filter Deadtime & shoot-through prevention 600V Half Bridge Gate Drive HIGH SIDE UVLO PULSE LEVEL OUTPUT...