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ID9S6015D - 600V Half Bridge Gate Driver

Description

The ID9S6015D is a wafer level production, which is a single phase high voltage power MOSFET and IGBT gate driver optimized to drive the gates of both high-side and low-side power transistors.

The floating channel driver design can accommodate BUS voltages as high as 600 V.

Features

  •  Fully operational to+600 V  Matched propagation delay for both channels  Floating channel designed for bootstrap operation  Gate drive supply range from 10 V to 20 V  UVLO for both channels  Cross Conduction Protection with 540 ns Internal Fixed Dead Time  Integrated bootstrap diode  Integrated gate on/off resistor  Built-in temperature-sensing.

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Datasheet Details

Part number ID9S6015D
Manufacturer IDRIVER
File Size 572.68 KB
Description 600V Half Bridge Gate Driver
Datasheet download datasheet ID9S6015D Datasheet
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    ID9S6015D 600V Half Bridge Gate Drive IC hh General Description The ID9S6015D is a wafer level production, which is a single phase high voltage power MOSFET and IGBT gate driver optimized to drive the gates of both high-side and low-side power transistors. The floating channel driver design can accommodate BUS voltages as high as 600 V. With a wide operation voltage range, high or low side gate drive voltage can be optimized for the best efficiency. Internal non-overlap circuitry further reduces switching losses by preventing simultaneous conduction of both transistors. The Under Voltage Lockout (UVLO) function ensures that both driver outputs are low when the supply voltage is low.
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