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F6102 - Ka-Band SATCOM Receiver

Datasheet Summary

Description

The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications.

The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements.

Features

  • 17.5GHz to 21.5GHz operation.
  • 8 radiation channels.
  • 6-bit phase control.
  • 20ns typical gain settling time.
  • 20ns typical phase settling time.
  • 3° typical RMS phase error.
  • 0.3dB typical RMS gain error.
  • 30dB gain attenuation range.
  • 5-bit IC address.
  • Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing.
  • -40°C to +95°C internal temperature sensor.
  • Programmable 4-state on-chip memory.
  • Supply voltage: +2.1V t.

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Datasheet preview – F6102

Datasheet Details

Part number F6102
Manufacturer IDT
File Size 155.94 KB
Description Ka-Band SATCOM Receiver
Datasheet download datasheet F6102 Datasheet
Additional preview pages of the F6102 datasheet.

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Full PDF Text Transcription

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Ka-Band SATCOM Receiver IC 17.5GHz to 21.5GHz F6102 Advance Short-Form Datasheet Description The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 16dB nominal electric gain and -30dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation. The typical total power consumption is 0.32W (40mW per channel).
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