Datasheet Details
| Part number | F6102 |
|---|---|
| Manufacturer | Renesas |
| File Size | 308.62 KB |
| Description | Ka-Band SATCOM Receiver |
| Datasheet |
 F6102 Datasheet
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General Description
The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications.
The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements.
Key Features
- 17.5GHz to 21.5GHz operation.
- 8 radiation channels.
- 6-bit phase control.
- 20ns typical gain settling time.
- 20ns typical phase settling time.
- 3° typical RMS phase error.
- 0.3dB typical RMS gain error.
- 30dB gain attenuation range.
- 5-bit IC address.
- Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing.
- -40°C to +95°C internal temperature sensor.
- Programmable 4-state on-chip memory.
- Supply voltage: +2.1V t.