Renesas Electronics F6102
The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 16dB nominal electric gain and -30dBm IP1dB.| Part No. | F6102 |
|---|---|
| Datasheet | F6102 Download |
| Manufacturer |  Renesas Electronics |
| Description | Ka-Band SATCOM Receiver |
| Buy | Stock & Price |
DESCRIPTION
The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation. The typical total power consumption is 0.32W (40mW per channel). Competitive Advantage● High integration
● Orthogonality of phase and amplitude control
● Advanced Serial Peripheral Interface (SPI) with 4-state memory
● Superior channel-to-channel isolation
● Minimal footprint Typical
APPLICATIONS
● Ka-Band SATCOM● Aerospace and Maritime
● Beam Steering
● Test and Measurement
FEATURES
● 17.5GHz to 21.5GHz operation● 8 radiation channels
● 6-bit phase control
● 20ns typical gain settling time
● 20ns typical phase settling time
● 3° typical RMS phase error
● 0.3dB typical RMS gain error
● 30dB gain attenuation range
● 5-bit IC address
● Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing
● -40°C to +95°C internal temperature sensor
● Programmable 4-state on-chip memory
● Supply voltage: +2.1V to +2.5V
● -40°C to +95°C ambient operating temperature range
● 27°C typical ambient operating temperature
● 5mm x 5mm, 40-QFN package Block Diagram Figure 1.
