IDT7M864 Datasheet | IDT

- Equivalent to JEDEC standard 8K x 8 monolithic RAM - 8,192 x 8 CMOS static RAM module plete with decoder and decoupling capacitor - High-speed 65 (mercial only) 75/85/120/150/200ns (equal access and cycle times) - Low power consumption, less than 1 watt maximum - Two pinout options (64K EPROM & 64K static RAM) - Utilizes IDT6116s - high performance 16K RAMs produced with advanced CEMOS'"I technology - CEMOS I process virtually eliminates alpha particle soft error rates (with no organic die coating) - Single 5V (±10%) power supply - Input and output directly TTL-patible - Static operation: no clocks or refresh required - Military modules available with semiconductor ponents 100% screened to MIL-STD-883 Class B DESCRIPTION: The IDT7M864/IDT8M864 are 64K (8,192 x 8 bit) high speed static RAMs constructed on a ceramic substrate using 41DT6116 (2,048 x 8) static RAMs in lead less chip carriers. Functional equivalence to - a monolithic 64K static RAM is achieved by utilization of an on-board decoder circuit that interprets the higher order addresses A" and A'2 to select one of the four 2Kx8 RAMs. Extremely fast speeds can be achieved with this technique due to use of the IDT6116 fabricated in IDT's high performance, high-reliability technology - CEMOS'"I. This state-of-the-art technology, bined with innovative circuit design techniques, provides the fastest 16K static RAMs available. The IDT7M864/IDT8M864 are available with access times as fast as 65ns for mercial and 75ns for military temperature ranges, with maximum power consumption of only 990mw' The circuit also offers a reduced power standby mode. When CS , high and/or CS2 (7MB64) goes low, the circuit will automatically go to, and remain in, a standby mode as long as these conditions are held. In the standby mode, the module consumes less than 440m W. Substantially lower power levels can be achieved in the ISB1 mode (less than 20m W max.) and 2V data retention mode (less than 3m W max.) - see "DC...